SFT1341-C-TL-E Details_SFT1341-C-TL-E PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	112mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 15W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK/TP-FA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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