TPCA8062-H,LQ(CM Details_TPCA8062-H,LQ(CM PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSVII-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	28A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.6mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	2.3V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN

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