G3R75MT12K Details_G3R75MT12K PDF Document_GeneSiC Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	G3R™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id	2.69V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 15 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	1560 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	207W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4

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