TK200F04N1L,LXGQ Details_TK200F04N1L,LXGQ PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSVIII-H
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	0.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	214 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14920 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	TO-220SM(W)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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