IRF6892STRPBF Details_IRF6892STRPBF PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	28A (Ta), 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 28A, 10V
Vgs(th) (Max) @ Id	2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 4.5 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	2.51 pF @ 13 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ S3C
Package / Case	DirectFET™ Isometric S3C

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