PHT11N06LT,135 Details_PHT11N06LT,135 PDF Document

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	4.9A (Ta), 10.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	40mOhm @ 5A, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 5 V
Vgs (Max)	±13V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 8.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-73
Package / Case	TO-261-4, TO-261AA

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