BSH121,135 Details_BSH121,135 PDF Document_NXP USA Inc.-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：28,861(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.07920	$0.07920

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	TrenchMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1 nC @ 8 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	700mW (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-323
Package / Case	SC-70, SOT-323

Other

Price advantage, BSH121,135 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
NTP45N06L	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 45A TO220AB	No price	In Stock:17012
IRL2505STRL	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 55V 104A D2PAK	No price	In Stock:17014
IXTA160N10T	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 160A TO263	$3.49163	In Stock:17016
2SK1403A-E	Renesas Electronics America Inc	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$2.95450	In Stock:834
SIHG22N60EF-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 19A TO247AC	$4.31650	In Stock:673