ECH8656-TL-H Details_ECH8656-TL-H PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	17mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10.8 nC @ 4.5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1060 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-ECH
Package / Case	8-SMD, Flat Lead

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