FCH023N65S3L4 Details_FCH023N65S3L4 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	SuperFET® III
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	23mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs	222 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	7160 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	595W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-4

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