AOL1412 Details_AOL1412 PDF Document_Alpha & Omega Semiconductor Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	SRFET™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	7716 pF @ 15 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	2.1W (Ta), 36W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	UltraSO-8™
Package / Case	3-PowerSMD, Flat Leads

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