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MOSFETs - Single
MSC025SMA120B Picture

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MSC025SMA120B

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In Stock:1,831(Ref. price)
Qty.Unit PriceExt. Price
1
$31.92960
$31.92960
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1.2 kV
Current - Continuous Drain (Id) @ 25°C
103A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
232 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3020 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Other
Price advantage, MSC025SMA120B is available in stock and can be delivered on the same day
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