BSN20,215 Details_BSN20,215 PDF Document_NXP USA Inc.-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：202,148(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.07680	$0.07680

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	TrenchMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V
Current - Continuous Drain (Id) @ 25°C	173mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	15Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	25 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	830mW (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

Other

Price advantage, BSN20,215 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
AOY4158P	Alpha & Omega Semiconductor Inc.	MOSFETs - Single	Datasheet	MOSFET N-CH	No price	In Stock:19650
IXTY1N100P	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 1000V 1A TO252	$1.79685	In Stock:19652
IRLR7843TRRPBF	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 161A DPAK	No price	In Stock:19656
STD65N55LF3	STMicroelectronics	MOSFETs - Single	Datasheet	MOSFET N-CH 55V 80A DPAK	No price	In Stock:4276
IXTH16P60P	IXYS	MOSFETs - Single	Datasheet	MOSFET P-CH 600V 16A TO247	$10.01560	In Stock:2889