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MOSFETs - Single

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NTH4LN067N65S3H

  • ON Semiconductor
  • New
  • POWER MOSFET, N-CHANNEL, SUPERFE
  • Datasheet download
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In Stock:17,554(Ref. price)
Qty.Unit PriceExt. Price
1
$5.05680
$5.05680
Documents
Specifications
DescriptionDetails
Series
SuperFET® III
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 3.9mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3750 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
266W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Other
Price advantage, NTH4LN067N65S3H is available in stock and can be delivered on the same day
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