BUK9M35-80EX Details_BUK9M35-80EX PDF Document_Nexperia USA Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	13.5 nC @ 5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1804 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	62W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK33
Package / Case	SOT-1210, 8-LFPAK33

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