FJ4B01110L1 Details_FJ4B01110L1 PDF Document_Panasonic Electronic Components-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	153mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 598µA
Gate Charge (Qg) (Max) @ Vgs	3.3 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	226 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	340mW (Ta)
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	ALGA004-W-0606-RA01
Package / Case	4-XFLGA, CSP

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