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SI4453DY-T1-GE3 Picture

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SI4453DY-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 12V 10A 8SO
  • Datasheet download
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In Stock:18,702(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 600µA
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
Price advantage, SI4453DY-T1-GE3 is available in stock and can be delivered on the same day
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