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MOSFETs - Single
SIR580DP-T1-RE3 Picture

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SIR580DP-T1-RE3

  • Vishay Siliconix
  • New
  • N-CHANNEL 80-V (D-S) MOSFET
  • Datasheet download
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In Stock:20,450(Ref. price)
Qty.Unit PriceExt. Price
1
$1.91100
$1.91100
Documents
Specifications
DescriptionDetails
Series
TrenchFET® Gen V
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
35.8A (Ta), 146A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Other
Price advantage, SIR580DP-T1-RE3 is available in stock and can be delivered on the same day
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