TPCA8109(TE12L1,V Details_TPCA8109(TE12L1,V PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Vgs (Max)	+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 30W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN

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