IRF7607 Details_IRF7607 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,674(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1310 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Micro8™
Package / Case	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Other

Price advantage, IRF7607 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
SPB03N60C3ATMA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 650V 3.2A TO263-3	No price	In Stock:18913
AUIRFS4115TRL	International Rectifier	MOSFETs - Single	Datasheet	MOSFET N-CH 150V 99A D2PAK	$2.31280	In Stock:18917
RT1C060UNTR	Rohm Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 20V 6A 8TSST	$0.44160	In Stock:4664
TSM3N80CP ROG	Taiwan Semiconductor Corporation	MOSFETs - Single	Datasheet	MOSFET N-CHANNEL 800V 3A TO252	No price	In Stock:4456
BUK653R2-55C,127	NXP USA Inc.	MOSFETs - Single	Datasheet	PFET, 120A I(D), 55V, 0.0048OHM,	$1.21520	In Stock:5771