APTGT100DH170G Details_APTGT100DH170G PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Configuration	Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	150 A
Power - Max	560 W
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 100A
Current - Collector Cutoff (Max)	350 µA
Input Capacitance (Cies) @ Vce	9 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP6
Supplier Device Package	SP6

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