APTGF90DH60T3G Details_APTGF90DH60T3G PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Configuration	Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	110 A
Power - Max	416 W
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 100A
Current - Collector Cutoff (Max)	250 µA
Input Capacitance (Cies) @ Vce	4.3 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	SP3
Supplier Device Package	SP3

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