FP10R12W1T4BOMA1 Details_FP10R12W1T4BOMA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：3,082(Ref. price)

Qty.	Unit Price	Ext. Price
1	$35.34680	$35.34680

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	20 A
Power - Max	105 W
Vce(on) (Max) @ Vge, Ic	2.25V @ 15V, 10A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	600 pF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, FP10R12W1T4BOMA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FF450R12KE4HOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 520A 2400W	$178.03950	In Stock:3541
IFS150V12PT4BOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 150A	No price	In Stock:20416
FF200R12KS4HOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 275A 1400W	$133.21980	In Stock:3546
CP30TD1-12A	Powerex Inc.	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 600V 30A 114W	No price	In Stock:20426
FD800R17KF6CB2NOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1700V 800A	No price	In Stock:20430