FPF2C8P2NL07A Details_FPF2C8P2NL07A PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Field Stop
Configuration	Three Phase
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	30 A
Power - Max	135 W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 30A
Current - Collector Cutoff (Max)	250 µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	F2 Module
Supplier Device Package	F2

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