APTGTQ200A65T3G Details_APTGTQ200A65T3G PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	200 A
Power - Max	483 W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 200A
Current - Collector Cutoff (Max)	200 µA
Input Capacitance (Cies) @ Vce	12 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	SP3F

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