APTGT225DU170G Details_APTGT225DU170G PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Configuration	Dual, Common Source
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	340 A
Power - Max	1250 W
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 225A
Current - Collector Cutoff (Max)	500 µA
Input Capacitance (Cies) @ Vce	20 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP6
Supplier Device Package	SP6

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