FMG2G75US120 Details_FMG2G75US120 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	-
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	75 A
Power - Max	445 W
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 75A
Current - Collector Cutoff (Max)	3 mA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	7PM-GA
Supplier Device Package	7PM-GA

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