FMS6G10US60 Details_FMS6G10US60 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Box
IGBT Type	-
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	10 A
Power - Max	66 W
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Current - Collector Cutoff (Max)	250 µA
Input Capacitance (Cies) @ Vce	0.71 nF @ 30 V
Input	Three Phase Bridge Rectifier
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	25PM-AA
Supplier Device Package	25PM-AA

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