FF200R12KT4HOSA1 Details_FF200R12KT4HOSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	C
Package	Bulk
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	320 A
Power - Max	1100 W
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	14 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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