FPF2G120BF07AS Details_FPF2G120BF07AS PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	Field Stop
Configuration	3 Independent
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	40 A
Power - Max	156 W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 40A
Current - Collector Cutoff (Max)	250 µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	Module
Supplier Device Package	F2

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