A1P50S65M2-F Details_A1P50S65M2-F PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	Trench Field Stop
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	50 A
Power - Max	208 W
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 50A
Current - Collector Cutoff (Max)	100 µA
Input Capacitance (Cies) @ Vce	4.15 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	ACEPACK™ 1

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