APT70GR120JD60 Details_APT70GR120JD60 PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	112 A
Power - Max	543 W
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 70A
Current - Collector Cutoff (Max)	1.1 mA
Input Capacitance (Cies) @ Vce	7.26 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SOT-227-4
Supplier Device Package	SOT-227

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