BSM30GP60BOSA1 Details_BSM30GP60BOSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Full Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	50 A
Power - Max	180 W
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Current - Collector Cutoff (Max)	300 nA
Input Capacitance (Cies) @ Vce	1.6 nF @ 25 V
Input	Three Phase Bridge Rectifier
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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