APTGT50A60T1G Details_APTGT50A60T1G PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	80 A
Power - Max	176 W
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 50A
Current - Collector Cutoff (Max)	250 µA
Input Capacitance (Cies) @ Vce	3.15 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP1
Supplier Device Package	SP1

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