BSM35GB120DN2HOSA1 Details_BSM35GB120DN2HOSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,376(Ref. price)

Qty.	Unit Price	Ext. Price
1	$71.37144	$71.37144

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Power - Max	280 W
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 35A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	2 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, BSM35GB120DN2HOSA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
CP25TD1-24A	Powerex Inc.	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 25A 138W	No price	In Stock:18980
NXH80T120L2Q0S2G	ON Semiconductor	Transistors - IGBTs - Modules	Datasheet	POWER INTEGRATED MODULE (PIM), T	$49.79380	In Stock:12051
FAM65HR51DS2	ON Semiconductor	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 650V 33A 135W	$67.9	In Stock:18990
APTGT400TL65G	Microchip Technology	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 650V SP6C	$285.78849	In Stock:18992
MID400-12E4	IXYS	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 420A 1700W Y3LI	No price	In Stock:18996