APT60GF120JRD Details_APT60GF120JRD PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	115 A
Power - Max	521 W
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 60A
Current - Collector Cutoff (Max)	500 mA
Input Capacitance (Cies) @ Vce	7.08 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227 (ISOTOP®)

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