FF225R12ME4PBPSA1 Details_FF225R12ME4PBPSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	EconoDUAL™ 3
Package	Tray
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	450 A
Power - Max	20 mW
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 225A
Current - Collector Cutoff (Max)	3 mA
Input Capacitance (Cies) @ Vce	13 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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