HGTD1N120BNS9A Details_HGTD1N120BNS9A PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	5.3 A
Current - Collector Pulsed (Icm)	6 A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 1A
Power - Max	60 W
Switching Energy	70µJ (on), 90µJ (off)
Input Type	Standard
Gate Charge	14 nC
Td (on/off) @ 25°C	15ns/67ns
Test Condition	960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252AA

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