RGTVX2TS65DGC11 Details_RGTVX2TS65DGC11 PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	111 A
Current - Collector Pulsed (Icm)	240 A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 60A
Power - Max	319 W
Switching Energy	2.08mJ (on), 1.15mJ (off)
Input Type	Standard
Gate Charge	123 nC
Td (on/off) @ 25°C	49ns/150ns
Test Condition	400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247N

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