IRG7PH30K10DPBF Details_IRG7PH30K10DPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	27 A
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 9A
Power - Max	180 W
Switching Energy	530µJ (on), 380µJ (off)
Input Type	Standard
Gate Charge	45 nC
Td (on/off) @ 25°C	14ns/110ns
Test Condition	600V, 9A, 22Ohm, 15V
Reverse Recovery Time (trr)	140 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC

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