SGP30N60 Details_SGP30N60 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	41 A
Current - Collector Pulsed (Icm)	112 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 30A
Power - Max	250 W
Switching Energy	1.29mJ
Input Type	Standard
Gate Charge	140 nC
Td (on/off) @ 25°C	44ns/291ns
Test Condition	400V, 30A, 11Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

Other

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