STGD4M65DF2 Details_STGD4M65DF2 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	M
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	8 A
Current - Collector Pulsed (Icm)	16 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Power - Max	68 W
Switching Energy	40µJ (on), 136µJ (off)
Input Type	Standard
Gate Charge	15.2 nC
Td (on/off) @ 25°C	12ns/86ns
Test Condition	400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr)	133 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK

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