FGA5065ADF Details_FGA5065ADF PDF Document_Fairchild Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	100 A
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 50A
Power - Max	268 W
Switching Energy	1.35mJ (on), 309µJ (off)
Input Type	Standard
Gate Charge	72.2 nC
Td (on/off) @ 25°C	20.8ns/62.4ns
Test Condition	400V, 50A, 6Ohm, 15V
Reverse Recovery Time (trr)	31.8 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN

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