NGTB60N60SWG Details_NGTB60N60SWG PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	240 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 60A
Power - Max	298 W
Switching Energy	1.41mJ (on), 600µJ (off)
Input Type	Standard
Gate Charge	173 nC
Td (on/off) @ 25°C	87ns/180ns
Test Condition	400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)	76 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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