SGW13N60UFDTM Details_SGW13N60UFDTM PDF Document_Fairchild Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	13 A
Current - Collector Pulsed (Icm)	52 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 6.5A
Power - Max	60 W
Switching Energy	85µJ (on), 95µJ (off)
Input Type	Standard
Gate Charge	25 nC
Td (on/off) @ 25°C	20ns/70ns
Test Condition	300V, 6.5A, 50Ohm, 15V
Reverse Recovery Time (trr)	55 ns
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D²PAK

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