STGYA120M65DF2 Details_STGYA120M65DF2 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	M
Package	Tube
IGBT Type	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	160 A
Current - Collector Pulsed (Icm)	360 A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 120A
Power - Max	625 W
Switching Energy	1.8mJ (on), 4.41mJ (off)
Input Type	Standard
Gate Charge	420 nC
Td (on/off) @ 25°C	66ns/185ns
Test Condition	400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	202 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Exposed Pad
Supplier Device Package	MAX247™

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