NTE3320 Details_NTE3320 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bag
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	100 A
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 50A
Power - Max	240 W
Switching Energy	1.30mJ (on), 1.34mJ (off)
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	240ns/300ns
Test Condition	300V, 50A, 130Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

Other

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