SGH30N60RUFDTU Details_SGH30N60RUFDTU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	48 A
Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 30A
Power - Max	235 W
Switching Energy	919µJ (on), 814µJ (off)
Input Type	Standard
Gate Charge	85 nC
Td (on/off) @ 25°C	30ns/54ns
Test Condition	300V, 30A, 7Ohm, 15V
Reverse Recovery Time (trr)	95 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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