APT80GA90S Details_APT80GA90S PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	POWER MOS 8®
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	900 V
Current - Collector (Ic) (Max)	145 A
Current - Collector Pulsed (Icm)	239 A
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 47A
Power - Max	625 W
Switching Energy	1.625mJ (on), 1.389mJ (off)
Input Type	Standard
Gate Charge	200 nC
Td (on/off) @ 25°C	18ns/149ns
Test Condition	600V, 47A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package	D3PAK

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