AFGY100T65SPD Details_AFGY100T65SPD PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	2.05V @ 15V, 100A
Power - Max	660 W
Switching Energy	5.1mJ (on), 2.7mJ (off)
Input Type	Standard
Gate Charge	109 nC
Td (on/off) @ 25°C	36ns/78ns
Test Condition	400V, 100A, 5Ohm, 15V
Reverse Recovery Time (trr)	105 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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