APT75GN120LG Details_APT75GN120LG PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	200 A
Current - Collector Pulsed (Icm)	225 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Power - Max	833 W
Switching Energy	8620µJ (on), 11400µJ (off)
Input Type	Standard
Gate Charge	425 nC
Td (on/off) @ 25°C	60ns/620ns
Test Condition	800V, 75A, 1Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	TO-264 [L]

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